发明名称 |
GROWTH OF IN-SITU THIN FILMS BY REACTIVE EVAPORATION |
摘要 |
<p>A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.</p> |
申请公布号 |
EP1697558(A2) |
申请公布日期 |
2006.09.06 |
申请号 |
EP20040821498 |
申请日期 |
2004.11.16 |
申请人 |
SUPERCONDUCTOR TECHNOLOGIES INC. |
发明人 |
MOECKLY, BRIAN, HAROLD;RUBY, WARD, S. |
分类号 |
C23C16/00;C23C14/06;C23C14/24;C23C14/56;H01C1/00;H01L39/24 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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