HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES HAVING SURFACE ROUGHENING

摘要

A gallium nitride (GaN) based light emilting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) or the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.