发明名称 Semiconductor device and manufacturing method thereof
摘要 A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.
申请公布号 US7102238(B2) 申请公布日期 2006.09.05
申请号 US20040828556 申请日期 2004.04.21
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOMA TAKASHI;SUZUKI AKIRA;SHINOGI HIROYUKI
分类号 H01L23/48;H01L23/50;H01L21/768;H01L23/31;H01L23/485;H01L23/52;H01L25/065;H01L27/148;H01L29/40 主分类号 H01L23/48
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