| 发明名称 |
Method for forming conductive line of semiconductor device |
| 摘要 |
A method for conductive line of semiconductor device is disclosed. A cobalt silicide layer is formed on an impurity junction region exposed through a contact hole. The cobalt silicide layer stabilizes a contact resistance so that the contact resistance of the impurity junction region does not vary in subsequent thermal processes.
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| 申请公布号 |
US7101791(B2) |
申请公布日期 |
2006.09.05 |
| 申请号 |
US20040879133 |
申请日期 |
2004.06.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JIN SUNG GON |
| 分类号 |
H01L21/44;H01L21/28;H01L21/285;H01L21/3205;H01L21/336;H01L21/4763;H01L21/74;H01L21/768;H01L21/8238 |
主分类号 |
H01L21/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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