Semiconductor memory device and method for its manufacture

摘要

The device has a ferroelectric layer (3) which comprises of an electrically non-conducting polymer (31) with ferroelectric nano particles (32) distributed in the polymer, where the nano particles are produced using sol-gel procedure. The non-conducting polymer is a conjugated polymer which is soluble in organic solvents. The switching units are implemented with organic semiconductors. An independent claim is also included for a method for production of a semiconductor memory device.