SURFACE TREATMENT FOR MULTI-LAYER WAFERS FORMED FROM LAYERS OF MATERIALS CHOSEN FROM AMONG SEMICONDUCTING MATERIALS
摘要
<p>This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.</p>
申请公布号
EP1695376(A1)
申请公布日期
2006.08.30
申请号
EP20040806490
申请日期
2004.12.10
申请人
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L'ENERGIE ATOMIQUE