| 摘要 |
A preferred embodiment of the invention provides a method for testing a MISFET to determine the effect of hot carrier injection (HCI) on integrated circuit lifetime. The method comprises applying a positive stress voltage to a gate having a high-k dielectric, while simultaneously holding a drain voltage equal to the stress voltage. Using a stress voltage that is greater than a normal operating voltage accelerates the degradation and failure of the integrated circuit. Embodiments include monitoring electrical parameters such as threshold voltage, transconductance, linear drain current, or saturation drain current. A pre-selected shift in a monitored electrical parameter indicates device failure. Embodiments include analyzing the data by plotting the logarithm of an accelerated device lifetime versus the gate stress voltage. The device lifetime under operating conditions is predicted by extrapolating the plot for a given device operating voltage.
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