| 发明名称 |
Conductive memory array having page mode and burst mode write capability |
| 摘要 |
Conductive memory array having page mode and burst mode write capability. The conductive memory array includes two-terminal memory plugs and driver circuits configured to write information to the memory plugs in two cycles. The array also includes associated circuitry that allows it to carry out such two-cycle writes in either page mode or burst mode.
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| 申请公布号 |
US7099179(B2) |
申请公布日期 |
2006.08.29 |
| 申请号 |
US20030745178 |
申请日期 |
2003.12.22 |
| 申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;CHEVALLIER CHRISTOPHE |
| 分类号 |
G11C11/00;G11C7/00;G11C7/02;G11C7/10;G11C8/00;G11C8/12;G11C11/16;G11C11/56;G11C13/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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