| 摘要 |
Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, and semiconductor devices, dies, and systems that incorporate the interconnects and contacts are disclosed. The contact openings are electrically shorted together with a selective material, a nucleation layer is selectively deposited onto the area to be plated (e.g., the base of the opening), and a conductive material is electroless plated onto the nucleation layer to fill the opening. The process achieves substantially simultaneous filling of openings having different surface potentials at an about even rate.
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