发明名称 |
Magnetic tunnel junction element structures and methods for fabricating the same |
摘要 |
Magnetic tunnel junction ("MTJ") element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.
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申请公布号 |
US7098495(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20040899610 |
申请日期 |
2004.07.26 |
申请人 |
FREESCALE SEMICONDUCOR, INC. |
发明人 |
SUN JIJUN;DAVE RENU W.;SLAUGHTER JON M.;AKERMAN JOHAN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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