METHOD FOR FORMING GATE ELECTRODE IN NON VOLATILE MEMORY DEVICE,申请号KR20040073679-传众专利搜索

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发明名称	METHOD FOR FORMING GATE ELECTRODE IN NON VOLATILE MEMORY DEVICE
摘要
申请公布号	KR100616193(B1)	申请公布日期	2006.08.25
申请号	KR20040073679	申请日期	2004.09.15
申请人		发明人
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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