REDUCED CHANNEL LENGTH LIGHTLY DOPED DRAIN TRANSISTOR USING IMPLANT OF A SUB-AMORPHOUS TILT ANGLE FOR FORMING INTERSTITIALS TO PROVIDE ENHANCED LATERAL DIFFUSION,申请号KR20007010869-传众专利搜索

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发明名称	REDUCED CHANNEL LENGTH LIGHTLY DOPED DRAIN TRANSISTOR USING IMPLANT OF A SUB-AMORPHOUS TILT ANGLE FOR FORMING INTERSTITIALS TO PROVIDE ENHANCED LATERAL DIFFUSION
摘要
申请公布号	KR100615657(B1)	申请公布日期	2006.08.25
申请号	KR20007010869	申请日期	2000.09.29
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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