| 摘要 |
A laminated structure including an InGaAs light absorption layer and an InP window layer on a n-type InP substrate. A p-type diffusion layer region is formed in an InP window layer. A depletion layer between the n-type InP substrate and the p-type diffusion layer region is formed when a voltage is applied between a cathode electrode and an anode electrode. The depletion layer is thicker in at least a portion of a region under the anode electrode than in a light detecting portion. In this case, the diffusion depth of the p-type diffusion layer region may be smaller in at least the portion of the region under the anode electrode than in the light detecting portion.
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