发明名称 |
Composition for forming a polymer layer and method of forming a pattern using the same |
摘要 |
A composition for forming a polymer layer and a method of forming a pattern using the same are provided. The composition comprises a polyhydroxystyrene resin, a cross-linking compound including silicon and a solvent. The composition has an organic-inorganic hybrid system. Thus, a polymer layer formed using the composition has improved etching resistance with respect to a photoresist pattern in an etching process.
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申请公布号 |
US2006186086(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060353628 |
申请日期 |
2006.02.13 |
申请人 |
KIM MYUNGSUN;YOON SANGWOONG;KIM TAE-YOUNG;KIM YOUNG-HO;PARK SEOK-BONG |
发明人 |
KIM MYUNGSUN;YOON SANGWOONG;KIM TAE-YOUNG;KIM YOUNG-HO;PARK SEOK-BONG |
分类号 |
C23F1/00;B05D1/32;B05D5/00;C08F8/42;C08K3/02 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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