发明名称 Method and system for qualifying a semiconductor etch process
摘要 A method of manufacturing a semiconductor device by qualifying an etch process. A semiconductor substrate is subjected to a predefined etch process to produce a partially-etched film. A scatterometry signature of the partially-etched film is produced. The scatterometry signature is used to determine if a physical property of the partially-etched film matches a target result.
申请公布号 US2006186406(A1) 申请公布日期 2006.08.24
申请号 US20060354498 申请日期 2006.02.15
申请人 TEXAS INSTRUMENTS INC. 发明人 BUSHMAN SCOTT G.;CELII FRANCIS G.
分类号 H01L21/66;H01L21/84;H01L23/58 主分类号 H01L21/66
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