发明名称 |
Method and system for qualifying a semiconductor etch process |
摘要 |
A method of manufacturing a semiconductor device by qualifying an etch process. A semiconductor substrate is subjected to a predefined etch process to produce a partially-etched film. A scatterometry signature of the partially-etched film is produced. The scatterometry signature is used to determine if a physical property of the partially-etched film matches a target result.
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申请公布号 |
US2006186406(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20060354498 |
申请日期 |
2006.02.15 |
申请人 |
TEXAS INSTRUMENTS INC. |
发明人 |
BUSHMAN SCOTT G.;CELII FRANCIS G. |
分类号 |
H01L21/66;H01L21/84;H01L23/58 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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