| 摘要 |
PROBLEM TO BE SOLVED: To improve a trench insulated-gate type bipolar transistor (IGBT) in electrical properties. SOLUTION: A narrow space La and a wide space Lb between adjacent insulated gates are provided, and a p-type well layer 9 deeper than a p-type base layer 4 is provided in the wide space. Thus, breakdown voltage is not lowered while the narrow space La and the wide space are provided between the adjacent insulated gates. COPYRIGHT: (C)2006,JPO&NCIPI
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