| 摘要 |
PROBLEM TO BE SOLVED: To allow a metal wiring layer to be positioned above polycrystalline silicon patterns while controlling the resistance value of each polycrystalline silicon pattern. SOLUTION: A semiconductor device comprises gate electrodes 11 and 13 and a resistor 23, each of which consists of a polycrystalline silicon pattern and is formed on a semiconductor substrate 1 via an insulating film 7 or 9; an interlayer insulating film 27 which is formed on the semiconductor substrate 1, and includes the gate electrodes 11 and 13 and the resistor 23; and a metal wiring layer 31 formed on the interlayer insulating film 27. The semiconductor device further comprises a first nitride film 29 formed under the metal wiring layer 31; a second nitride film 33 covering at least parts of the side surfaces, and the top surface of the metal wiring layer 31; and an SOG film (a part of 35a) that has a flat surface at a height exposing at least parts of the top surface of the metal wiring layer, which is at the highest position of the metal wiring layer 31, from the second nitride film 33, and has been subjected to etch back treatment for planarization. COPYRIGHT: (C)2006,JPO&NCIPI
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