METHOD FOR FORMING ORGANOSILICON FILM, SEMICONDUCTOR DEVICE HAVING SUCH ORGANOSILICON FILM AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for forming an organosilicon film having low dielectric constant and little leakage current. Specifically disclosed is a method for forming an organosilicon film by chemical vapor deposition using an organosilicon compound as a raw material gas, wherein an organosilicon compound containing at least silicon, hydrogen and carbon as constitutional elements and having, in a molecule, two or more groups having an unsaturated bond is used while being mixed with a silicon hydride gas.