| 摘要 |
A transistor having a discontinuous contact etch stop layer comprising: a substrate having a surface, a gate dielectric on said surface of said substrate, a gate electrode on said gate dielectric, a spacer along a sidewall of said gate dielectric and gate electrode, a source and a drain formed on opposite sides, respectively, of said gate dielectric and said gate electrode, the source and drain defining a channel region having a channel length extending substantially from said source to said drain, in the substrate therebetween, and a contact etch stop layer on said gate and said spacers, and said source and drain. The contact etch stop layer is substantially locally continuous in a direction perpendicular to the channel region length and substantially locally discontinuous in a direction parallel to the channel region length.
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