发明名称 |
Method of making CMOS devices on strained silicon on glass |
摘要 |
A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
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申请公布号 |
US2006189111(A1) |
申请公布日期 |
2006.08.24 |
申请号 |
US20050060878 |
申请日期 |
2005.02.18 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LEE JONG-JAN;MAA JER-SHEN;TWEET DOUGLAS J.;ONO YOSHI;HSU SHENG T. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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