| 摘要 |
PROBLEM TO BE SOLVED: To realize a solid state imaging device where the areas occupied by a transistor part and a wiring part in a photoelectric conversion cell are small, and the area of opening of the photoelectric converter is large without enlarging the size of the photoelectric conversion cell. SOLUTION: The photoelectric conversion cell 31 is formed of a PD 1, a reset transistor 5, and the transistor part composed of a pixel amplifying transistor 9 and switching transistor 13. Similarly, a photoelectric conversion cell 33 adjacent to the photoelectric conversion cell 31 on the same line is formed of a PD 3, a reset transistor 7, and a pixel amplifying transistor 11 and switching transistor 15. The reset transistor 5 of the first photoelectric conversion cell 31 and the reset transistor 7 of the photoelectric conversion cell 33 adjacent to the photoelectric conversion cell 31 in the line direction are formed so as to share an active area. COPYRIGHT: (C)2006,JPO&NCIPI
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