发明名称 Semiconductor device and method of manufacturing semiconductor device
摘要 Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
申请公布号 US2006186488(A1) 申请公布日期 2006.08.24
申请号 US20060407066 申请日期 2006.04.20
申请人 发明人 KOIKE MASAHIRO;KOYAMA MASATO;INO TSUNEHIRO;KAMIMUTA YUUICHI;TAKASHIMA AKIRA;SUZUKI MASAMICHI;NISHIYAMA AKIRA
分类号 C23C14/06;H01L29/94;C23C14/34;H01L21/28;H01L21/283;H01L21/318;H01L21/336;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/423;H01L29/49;H01L29/51;H01L29/78 主分类号 C23C14/06
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