ADVANCED LOW DIELECTRIC CONSTANT ORGANOSILICON PLASMA CHEMICAL VAPOR DEPOSITION FILMS

摘要

A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH₂- crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH₃+CH₂ stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH₃ bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.