发明名称 Semiconductor sensor with pressure difference adjusting means
摘要 In a semiconductor sensor having a membrane structure, the destruction of the membrane caused by the expansion or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented. A semiconductor sensor 10 comprising a substrate 30 and a membrane 20 formed on the top surface thereof, in which the bottom of the substrate 30 and a mounting surface 50 on which the sensor 10 is mounted are bonded, has pressure difference adjusting means 22 a to 22 c for eliminating the difference in pressure of a fluid between an inside and an outside of a hollow part 34 while the sensor is in use.
申请公布号 US7095064(B2) 申请公布日期 2006.08.22
申请号 US20040809343 申请日期 2004.03.26
申请人 DENSO CORPORATION 发明人 HAMAMOTO KAZUAKI
分类号 G01P15/08;H01L29/82;G01D21/00;G01J1/02;G01L7/00;G01L19/04;G01L19/06;G01L19/14;G01N27/04;H01L29/84 主分类号 G01P15/08
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