MANUFACTURING METHOD OF VERTICAL BIPOLAR JUNCTION TRANSISTOR WHICH HAS DEEP N-WELL IN TRIPPLE-WELL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TECHNOLOGY AND ITS RECEIVER
摘要
申请公布号
KR100616233(B1)
申请公布日期
2006.08.18
申请号
KR20050069155
申请日期
2005.07.28
申请人
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
