| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which sneak of a high frequency signal to a bias circuit side is minimized while thermal runaway of a transistor is prevented, while high power gain is assured. SOLUTION: A capacitor element 12 is formed by laminating a lower electrode 12b, a dielectric substance 12e, and an upper electrode 12t in this order. An inductor 14 is formed by providing an inductor component by thinning a metal wiring and making it into spiral form. The inductor 14 is formed by the same wiring layer and metal material as the lower electrode 12b of the capacitor element 12 connected to the base electrode 11b of the transistor 11. An DC bias is input from a DC bias supplying wiring BP through the spiral-formed inductor 14 to the base B of the transistor 11, and the high frequency signal is input through the capacitor element 12 to the base B of the transistor 11. COPYRIGHT: (C)2006,JPO&NCIPI
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