FLASH MEMORY CELL HAVING BURIED FLOATING GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed herein are a flash memory cell having a buried floating gate structure and a method of manufacturing the flash memory cell. The flash memory cell includes a semiconductor substrate, a control gate, a dielectric layer, a floating gate, a floating gate, a tunnel oxide layer, and source and drain regions. The control gate is formed on the semiconductor substrate and is formed of a first conductive layer. The dielectric layer is formed between the surface of the semiconductor substrate and the control gate. The floating gate is buried in the semiconductor substrate below the dielectric layer and is formed of a second conductive layer. The tunnel oxide layer formed to surround the floating gate in the semiconductor substrate. The source and drain regions are spaced apart from each other, with the floating gate and the tunnel oxide layer within the semiconductor substrate being disposed therebetween.