| 摘要 |
PROBLEM TO BE SOLVED: To make the thickness of an SOI film uniform by reducing variations in the film thickness, without causing damages to the SOI layer. SOLUTION: The process for producing an SOI substrate 11 comprises a step of forming an oxide film 21 on the surface of a first silicon substrate 14, a step of forming an ion implantation region 16 in the first silicon substrate 14 by implanting hydrogen ions, a step of laying the first silicon substrate 14 on top of a second silicon substrate 12 via an oxide film 21, a step of making a bonding substrate 18 on which an SOI layer 13 is formed by performing a first heat treatment at a predetermined temperature, thereby separating the first silicon substrate 14 in the ion implanted region 16, a step of smoothing the separation plane of the SOI layer 13 by wet etching, a step of reducing damage by performing a second heat treatment of the bonding substrate 18 in oxygen atmosphere of 750-900°C, and a step of reinforcing the bonding strength through a third heat treatment of 900-1,200°C. COPYRIGHT: (C)2006,JPO&NCIPI
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