| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of effectively forming an insulating film excellent in interface characteristics (interface levels, fixed electric charges) between a semiconductor layer (17) and the insulating film (18). SOLUTION: The forming method comprises a process of oxidizing the semiconductor surface of a substrate (9) to be processed on which a semiconductor element is formed with an oxygen atom active species produced by a plane parallel type plasma generation apparatus excited by a high frequency power supply (6) of a predetermined frequency, and hereby forming a first insulating film (18) on the substrate (9) to be processed. It further comprises, when a thicker insulating film is required, a process of forming a second insulating film (20) on the first insulating film (18) with a chemical vapor phase deposition method having a high film deposition speed. COPYRIGHT: (C)2006,JPO&NCIPI
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