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发明名称
METHOD OF FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20060090911(A)
申请公布日期
2006.08.17
申请号
KR20050011632
申请日期
2005.02.11
申请人
HYNIX SEMICONDUCTOR INC.
发明人
SUNG, MIN GYU;LIM, KWAN YONG
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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