| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device exhibiting high efficiency and a high breakdown voltage while reducing energy loss. SOLUTION: On an Si single crystal substrate 2 of n conductivity type having a crystal face orientation of ä111} and carrier concentration of 10<SP>16</SP>-10<SP>21</SP>/cm<SP>3</SP>(≈resistivity of 1-0.00001Ωcm), a 3C-SiC single crystal buffer layer 3 of n conductivity type having a thickness of 0.05-2μm and carrier concentration of 10<SP>16</SP>-10<SP>21</SP>/cm<SP>3</SP>, a hexagonal In<SB>w</SB>Ga<SB>x</SB>Al<SB>1-w-x</SB>N single crystal buffer layer 4 (0≤w<1, 0≤x<1, w+x<1) having a thickness of 0.01-0.5μm, and a hexagonal In<SB>y</SB>Ga<SB>z</SB>Al<SB>1-y-z</SB>N single crystal layer 5 of n conductivity type (0≤y<1, 0<z≤1, y+z≤1) having a thickness of 0.1-5μm and carrier concentration of 10<SP>11</SP>-10<SP>16</SP>/cm<SP>3</SP>(≈resistivity of 1-100,000Ωcm) are formed sequentially. Furthermore, a back electrode 6 is formed on the back of the Si single crystal substrate 2 and a surface electrode 7 is formed on the surface of the hexagonal In<SB>y</SB>Ga<SB>z</SB>Al<SB>1-y-z</SB>N single crystal layer 5. COPYRIGHT: (C)2006,JPO&NCIPI |
