| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an SOI wafer capable of preventing the generation of a thermal strain, a peeling, a crack or the like resulting from the difference of the coefficients of thermal expansion of a transparent insulating substrate and an SOI layer. SOLUTION: In the manufacturing method for the SOI wafer, an ion implanting layer is formed in a wafer by implanting at least one of hydrogen ions or rare-gas ions from the surface of a single-crystal silicon wafer, and the ion-implanting surface of the single-crystal silicon wafer and/or the surface of the transparent insulating substrate are treated with a plasma and/or ozone. In the manufacturing method, the ion-implanting surface of the single-crystal silicon wafer and the surface of the transparent insulating substrate are stuck fast and joined at a room temperature while using the treated surfaces as joint surfaces, the joint surfaces are irradiated with ultraviolet rays from the transparent-insulating substrate side, and a bonding power is increased. In the manufacturing method, an impulse is applied to the ion implanting layer, the single-crystal silicon wafer is peeled mechanically, and the SOI layer is formed on the transparent insulating substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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