| 摘要 |
In a transistor in which a contact surface area between a contact and a source/drain region is enlarged and a method of manufacturing the same, a lower insulating layer is formed on a substrate. Then, a semiconductor layer is formed on the lower insulating layer and selectively recessed to form a recess groove. A gate dielectric layer is formed and a gate is formed on the gate dielectric layer, wherein the gate fills the recess groove. Afterwards, a source/drain region is formed in a thick portion of the semiconductor layer, adjacent to side portions of the gate. Finally, a contact is formed to be in contact with the source/drain region, wherein a bottom end portion of the contact is partially buried in the source/drain region.
|
