ALUMINUM NITRIDE SINGLE CRYSTAL LAMINATED SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an aluminum nitride single crystal laminated substrate having, on its surface, an aluminum nitride (AlN) single crystal membrane in which the generation of penetration dislocation is inhibited, and being useful as a base for a semiconductor device.

SOLUTION: The aluminum nitride single crystal laminated substrate is provided by laminating an aluminum nitride single crystal on a single crystal α-alumina substrate such as sapphire with the direct reduction nitriding method. A dislocation layer of edge dislocation with a thickness of 10 nm or less exists near the interface of both the crystals. Little penetration dislocation exists in the aluminum nitride single crystal membrane present on the surface.

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