| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device capable of acquiring a desired acoustic velocity of the surface acoustic wave device by eliminating the curvature in a manufacturing process, and to provide the manufacturing method of the surface acoustic wave device. SOLUTION: A surface acoustic wave device 10 forms a piezoelectric body layer 30 on the surface of a semiconductor substrate 20, and an IDT40 on the surface of the piezoelectric body layer 30. When the semiconductor substrate 20 and the piezoelectric body layer 30 are formed with the materials from whose coefficients of thermal expansion are different, there are formed in the piezoelectric body layer 30 two or more dummy regions 60 whose coefficients of thermal expansion differ from that of the piezoelectric body layer 30. The dummy regions 60 is arranged outside the propagation coverage of a sound wave, and constituted so that the piezoelectric object layer 30 and the semiconductor substrate 20 may perform equivalent thermal expansion and contraction. COPYRIGHT: (C)2006,JPO&NCIPI
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