| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device subjected to microfabrication and having a nonvolatile memory exhibiting good charge retention properties. SOLUTION: The semiconductor memory device comprises a semiconductor layer 10, a nonvolatile memory 20, an etching stopper film 40 provided above the nonvolatile memory 20, and an interlayer insulation layer 50. The nonvolatile memory 20 comprises a first region 10X and a second region defined by a buried insulation layer 12, a control gate consisting of an impurity region 28, an insulation layer 22, a floating gate electrode 24 consisting of the first region 10X and a continuous layer above the second region, and a source region and a drain region provided in the semiconductor layer on the side of the floating gate electrode 24. A region 42 from where the etching stopper film 40 is removed is provided above the floating gate electrode 24. COPYRIGHT: (C)2006,JPO&NCIPI
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