发明名称 |
Photoelectric conversion layer-stacked solid-state imaging element |
摘要 |
A photoelectric conversion layer-stacked solid-state imaging element comprises: a semiconductor substrate having a signal reading circuit formed thereon; at least one layer of photoelectric conversion layer each of which is provided interposed between a common electrode layer and a plurality of pixel electrode layers corresponding to pixels, said at least one layer of photoelectric conversion layer being stacked above the semiconductor substrate via a light shielding layer; and inhibiting structures each of which inhibits a reflected light produced by reflection of incident light on the light shielding layer, the incident light having passed through said at least one layer of photoelectric conversion layer and entered into a pixel, from entering in direction toward adjacent pixels.
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申请公布号 |
US2006181629(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20060356032 |
申请日期 |
2006.02.17 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
MIYASHITA TAKESHI;MISAWA TAKESHI |
分类号 |
H01L27/14;H01L27/146;H04N5/335;H04N5/369;H04N9/07 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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