| 发明名称 |
Field effect transistor and method for fabricating the same |
| 摘要 |
A field effect transistor includes a nitride semiconductor layer; an In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N layer (wherein 0<x<1, 0<y<1 and 0<x+y<1) formed on the nitride semiconductor layer; and a source electrode and a drain electrode formed on and in contact with the In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N layer. The lower ends of the conduction bands of the nitride semiconductor layer and the In<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N layer are substantially continuous on the interface therebetween.
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| 申请公布号 |
US2006180831(A1) |
申请公布日期 |
2006.08.17 |
| 申请号 |
US20060355939 |
申请日期 |
2006.02.17 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAZAWA SATOSHI;UEDA TETSUZO;TANAKA TSUYOSHI |
| 分类号 |
H01L31/109 |
主分类号 |
H01L31/109 |
| 代理机构 |
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