发明名称 |
Phase change memory device providing compensation for leakage current |
摘要 |
A semiconductor memory device includes a plurality of phase change memory cells connected to the same bitline and different respective word lines. A read operation is performed on one of the memory cells by selecting the bitline and a corresponding wordline. While the read operation is performed, leakage current produced by non-selected memory cells is detected by a leakage detecting circuit and compensated by a leakage current supply circuit.
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申请公布号 |
US2006181915(A1) |
申请公布日期 |
2006.08.17 |
申请号 |
US20050319266 |
申请日期 |
2005.12.29 |
申请人 |
OH HYUNG-ROK;CHO WOO-YEONG;KIM HYE-JIN |
发明人 |
OH HYUNG-ROK;CHO WOO-YEONG;KIM HYE-JIN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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