发明名称 |
AMORPHOUS SELENIUM FLAT PANEL X-RAY IMAGER FOR TOMOSYNTHESISAND STATIC IMAGING |
摘要 |
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on and in physical and electrical contact with an amorphous selenium-based charge generator layer, thereby reducing ghosting. The thin-film transistors have leakage current th at rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.
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申请公布号 |
CA2536724(A1) |
申请公布日期 |
2006.08.16 |
申请号 |
CA20062536724 |
申请日期 |
2006.02.16 |
申请人 |
HOLOGIC, INC. |
发明人 |
JING, ZHENXUE;CHENG, LAWRENCE |
分类号 |
G01T1/24;A61B6/00;H05G1/64 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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