发明名称 |
Replacement metal gate transistor with metal-rich silicon layer and method for making the same |
摘要 |
A semiconductor device with a replacement metal gate and the process for making the same removes a dummy gate from a semiconductor device. Within the recess left by the dummy gate is a silicon layer on a gate dielectric layer. A replacement metal is deposited on the thin silicon layer and then reacted with the silicon layer to form a metal-rich silicon layer on the gate dielectric layer.
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申请公布号 |
US7091118(B1) |
申请公布日期 |
2006.08.15 |
申请号 |
US20040988532 |
申请日期 |
2004.11.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES |
发明人 |
PAN JAMES;PELLERIN JOHN;BLACK LINDA R.;CHUDZIK MICHAEL;JAMMY RAJARAO |
分类号 |
H01L21/3205;H01L21/338 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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