发明名称 Thin film transistor substrate for liquid crystal display panel and manufacturing method thereof
摘要 In an LCD panel substrate and a manufacturing method thereof, a gate pattern includes a gate line formed on a pixel region and a peripheral region of a transparent insulating substrate and a gate electrode branched from the gate line. A gate insulating film is formed on the substrate having the gate pattern. An active pattern is formed on the gate insulating film and including a first impurity region, a second impurity region, and a channel region therebetween. A data pattern is formed on the active pattern and the gate insulating film. The data pattern includes a first electrode, a second electrode, and a data line. A first insulating interlayer is formed on the data pattern and the gate insulating film. The first insulating interlayer includes a first contact hole for partially exposing the first electrode, a second contact hole for exposing the gate electrode of a first drive transistor of the peripheral region and a third contact hole for exposing the first/second electrode of a second drive transistor of the peripheral region. An electrode pattern part is formed on the first insulating interlayer. The electrode pattern part includes a first electrode pattern coupled to the first electrode of the pixel region through the first contact hole, and a second electrode pattern connecting the partially exposed gate electrode of the first drive transistor with the exposed first/second electrode of the second drive transistor through the second and third contact holes.
申请公布号 US7092047(B2) 申请公布日期 2006.08.15
申请号 US20040814955 申请日期 2004.03.31
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 JEON JIN
分类号 G02F1/136;G02F1/1368;G02F1/1362;G09F9/00;G09F9/30;G09F9/35;H01L21/28;H01L21/3205;H01L23/52;H01L29/786 主分类号 G02F1/136
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