| 摘要 |
Disclosed is an example method of manufacturing a semiconductor device. The disclosed example method includes depositing a gate insulating layer on an active region of a self aligned silicide (salicide) region and a non-self aligned silicide (salicide) region of a semiconductor substrate, forming a gate electrode, a poly crystal silicon layer, on the gate insulating layer of the self aligned silicide (salicide) region, and forming a spacer on both sidewalls of the gate electrode. The example method may further include depositing a silicide shielding layer on the gate insulating layer to cover the gate electrode and the spacer, forming a photoresist on the silicide shielding layer of the non-self aligned silicide (salicide) region, removing the silicide shielding layer of the self aligned silicide (salicide) region to expose the gate electrode, and performing an ion-implantation to render the poly crystal silicon layer of the gate electrode amorphous, without removing the photoresist on the silicide shielding layer of the non-self aligned silicide (salicide) region. The example method may further include removing the photoresist on the silicide shielding layer of the non-self aligned silicide (salicide) region and cleaning the semiconductor substrate and depositing a metal layer for forming a silicide layer and forming the silicide layer on the gate electrode of the self aligned silicide (salicide) region by annealing the semiconductor device.
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