| 摘要 |
<p>903,919. Semi-conductor devices. WESTING- HOUSE ELECTRIC CORPORATION. Dec 29, 1960 [Feb. 29, 1960], No. 44599/60. Class 37. A multi-region semi-conductor device has a base region of one conductivity type and at least three regions of the opposite type spaced from each other and including first and second base electrodes fused to the base region, first and second emitter regions and a collector region and a low resistance non-rectifying bridge between the first emitter electrode and the second base electrode. As shown (Figs. 1 and 2), the device consists of a silicon wafer 5 with boron as a P-type impurity. The collector electrode 8 is made by alloying the wafer to a gold-antimony foil to produce an N, region 6. The first base electrode 9 which may be of P- type impurity containing gold or gold alloy, e.g. 0.3% by weight of boron. This first base electrode is surrounded successively by (1) a ring-shaped emitter region 10 made of the same material as the collector, (2) a ring-shaped base electrode 12, (3) a further emitter 14 and a third base. The first and second emitters 10, 14 and the second base are all joined together by brazing gold-plated silver bridges 18. The equivalent circuit of the device used as two transistors 35, 36 in cascade is shown in Fig. 6, the base connection to the second transistor being, if desired, only a single one by omitting base electrode 15. The device may be used as a unipolar or tetrode transistor by changing the bridging scheme. The various electrodes need not be circular and electrodes 12, 14 may be placed so close together that they short circuit. A section of emitter electrode 14 may be omitted and a low resistance path provided on the surface of wafer 5 between base electrodes 12 and 15.</p> |
