| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing completely the incorrect writing of its memory, etc. <P>SOLUTION: In the semiconductor device of a semiconductor device 100 having an electrically writable memory 9b, its power-supply terminal 3 or its output terminal 5 is used concurrently as a write-voltage feed terminal to the memory 9b, and a fuse 40 is inserted into a write-voltage feed line LN1, whereby the write-voltage feed terminal and the memory 9b are connected. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
