METHOD FOR PREPARING ENDOSSEOUS IMPLANTS WITH ZIRCON DIOXIDE COATING

摘要

The method includes the following steps: formulation of liquid, non-gelled and stable precursors by solvolysis of ZV (IV) compounds; precursor deposition on endosseous implant surface; thermal treatment to achieve film densification, in the presence of oxygen, of a complex formed by the said endosseous implant and precursor, to obtain on the implant surface a thin nanocrystalline zirconium dioxide film.