| 摘要 |
PROBLEM TO BE SOLVED: To prevent a single crystal from being brought into contact with a radiation tube arranged at the outer periphery of the single crystal by absorbing shock by an eccentric movement or vibration by allowing the single crystal to be brought into contact with a shock absorption member provided around the single crystal in the case when a silicon single crystal being rotated makes eccentric movement or when the entire apparatus vibrates by earthquake or other accidental factors while the silicon single crystal is pulled by a Czochralski method. SOLUTION: In an apparatus for manufacturing the silicon single crystal by the Czochralski method comprising growing the silicon single crystal by pulling a seed crystal brought into contact with a silicon melt, a radiation tube 20 is arranged around a pulled silicon single crystal; and a shock absorption ring 21 for absorbing the shock by the eccentric movement of the silicon single crystal 25 is provided near the pulled silicon single crystal 25 at the inside of the radiation tube 20 through a spring 22 provided between the the radiation tube 20 and itself. COPYRIGHT: (C)2006,JPO&NCIPI
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