| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having different gate lengths and gate widths and comprising a full silicide gate electrode. SOLUTION: The semiconductor device 100 comprises a semiconductor substrate 5, a first gate insulating film 51 formed on the semiconductor substrate, a second gate insulating film 52 formed on the semiconductor substrate, a first full silicide gate electrode 11 formed on the first gate insulating film, and a full silicide second gate electrode 12 formed on the second gate insulating film which occupies the surface of the semiconductor substrate in the area larger than the first gate electrode and is thinner than the first gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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