摘要 |
<p>The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the first and second layers (1, 3) contain a smaller concentration of oxidisable species than the second layer (2); forming a mask (4) on the third layer (3); and oxidising the second layer (2) with the diffusion of oxidising species through the third layer (3).</p> |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CNRS-;ALMUNEAU, GUILHEM;MUNOZ-YAGUE, ANTONIO;CAMPS, THIERRY;FONTAINE, CHANTAL;BARDINAL-DELAGNES, VERONIQUE |
发明人 |
ALMUNEAU, GUILHEM;MUNOZ-YAGUE, ANTONIO;CAMPS, THIERRY;FONTAINE, CHANTAL;BARDINAL-DELAGNES, VERONIQUE |