| 发明名称 |
PIEZOELECTRIC THIN FILM DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film device having good piezoelectric characteristics, and its manufacturing method. <P>SOLUTION: The piezoelectric thin film device is characterized by being formed by an electrode layer which is to be heated within a predetermined time period by a higher temperature than the temperature at the forming time of the electrode layer after a lower electrode layer has been formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006211589(A) |
申请公布日期 |
2006.08.10 |
| 申请号 |
JP20050024225 |
申请日期 |
2005.01.31 |
| 申请人 |
KYOCERA KINSEKI CORP |
发明人 |
ISHIDA YASUAKI;SASAKI JUN;DOI ARATA |
| 分类号 |
H03H9/17;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/319;H03H3/02 |
主分类号 |
H03H9/17 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
